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Plasmatherm

Used Plasmatherm 790 ICP

Inventory Number: 64141
Now (USD): $89,500.00

Plasma Therm 790 ICP Inductively Coupled Plasma Etcher. Inductively Coupled Plasma (ICP) refers to a system configuration where plasma is generated by means of inductively coupling RF power in the source while independently controlling the ion energy bombarding the substrate via the applied bias power. This independent control allows for a wider process space to address a range of requirements from highly chemical processes such as the etching of Si or Cr to the highly physical processes such as the etching of sapphire. Plasma generation is done using 2 MHz RF power in the source while the bias is applied using 13.56 MHz RF power. This system is currently configured for 4" wafers but can process different size wafers if the chuck and wafer clamp are changed. We only have the 4" now. System can be configured with up to eight MFC gas inputs but only currently configured with four MFC. Previous gases used Freon, Oxygen, Argon, C318, Nitrogen. Comes with Neslab Chiller, turbo and roughing pumps. 208V,3Ph,60Hz

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