Equipment Photos

Equipment Details

Inventory Number: 56453
Category: Plasma Etchers - Ashers - Ion Mills
Manufacturer: Trion Technology

Trion Technology Minilock Single Wafer RIE Etcher. LCD display. Load lock with transfer arm. Current substrate carrier for up to 150mm wafers. Five MFC for gas input. Missing RF generator and vacuum pump. Sold As Is.

Now (USD): $2,999.00

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Used March Instruments PX 1000E8

Inventory Number: 58786
Now (USD): $21,500.00

March Instruments PX 1000E8 Plasma Asher/Etcher with Pneumatic Vertical Door. Batch system for plasma cleaning or etching. Currently configured with vertical shelves: 18 in. x 6 in. RFX 600 13.56 MHz RF generator. Two gas inputs. Does not include vacuum pump at this price, additional cost depending on type required. Shelves are mounted vertically from top to bottom. Not standard horizontal mounting.

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Used Oxford Instruments 90 Plus RIE

Inventory Number: 62737
Now (USD): $19,500.00

Oxford Instruments 90 Plus RIE Reactive Etcher with Loadlock. Small batch load-locked RIE with 275 mm electrode. Easy to use computer interface controls all system functions. 13.56 MHz RF generator, 600W. Gas box with four MFC. Previous gases used: Oxygen, Boron Trichloride, Chlorine and Nitrogen. SYSTEM SOLD AS IS WHERE IS, ONLY WHAT IS IN THE PHOTOS.

Product Details

Used Anatech SP100

Inventory Number: 62871
Now (USD): $9,500.00

Anatech SP100 Table Top Plasma System. For plasma cleaning of small parts or for modifying surfaces. Digital countdown timer. Analog pressure display. Gas flow with needle valve control. RF Power Source: 100W at 13.56 MHz. Quartz Chamber: 4 in. x 8 in. Includes vacuum pump. 110V, 60 Hz, 10A.

Product Details

Used Plasmatherm 790 ICP

Inventory Number: 64141
Now (USD): $89,500.00

Plasma Therm 790 ICP Inductively Coupled Plasma Etcher. Inductively Coupled Plasma (ICP) refers to a system configuration where plasma is generated by means of inductively coupling RF power in the source while independently controlling the ion energy bombarding the substrate via the applied bias power. This independent control allows for a wider process space to address a range of requirements from highly chemical processes such as the etching of Si or Cr to the highly physical processes such as the etching of sapphire. Plasma generation is done using 2 MHz RF power in the source while the bias is applied using 13.56 MHz RF power. This system is currently configured for 4" wafers but can process different size wafers if the chuck and wafer clamp are changed. We only have the 4" now. System can be configured with up to eight MFC gas inputs but only currently configured with four MFC. Previous gases used Freon, Oxygen, Argon, C318, Nitrogen. Comes with Neslab Chiller, turbo and roughing pumps. 208V,3Ph,60Hz

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