Used Oxford Instruments 90 Plus RIE

Inline Automatic Plasma Etcher. The Plasma Inline 803 is a fully automatic, microprocessor-based plasma chemistry etcher designed especially for the etching of silicon dioxide (Si02) thin film deposited on single crystal or polysilicon semiconductor wafers. It provides up to four process gases, two process channels and a clean channel. Sold As Is. Does not come with monitor or RF generator.

Turbo Pumped Argon/Reactive Plasma DuoMill Dual Station Ion Milling System. Ion milling system for the preparation of high quality TEM specimens. Two independent milling stations mounted on a single high speed vacuum system. Each milling station has a Whisperlok specimen exchange system which functions without disturbing the vacuum or milling conditions of the other station and two Octogun ion guns.

Single Wafer RIE Etcher. LCD display. Load lock with transfer arm. Current substrate carrier for up to 150mm wafers. Five MFC for gas input. Missing RF generator and vacuum pump. Sold As Is.

Automatic Plasma Treatment and Cleaning System. Menu driven programming with multi-step features. Parallel plates electrodes mounted vertically. Total of four sets with a surface area of 13 in. H x 28 in. D and a spacing of 1 in. between plates. Two gas inputs controlled via MFC. PE-2500 RF generator. Includes vacuum pump.

ICP Inductively Coupled Plasma Etch System. For applications requiring a downstream, high density plasma source. Allows for higher plasma densities at lower pressures. Tight anisotropy in high aspect ratio structures and reduces microloading effect. Four MFC gas inputs mounted in seperate cabinet. System has turbo pump and roughing pump. Two RFX-600 13.56 MHz RF generators. 200mm substrate chuck.

THIS UNIT IS SOLD. WE WOULD LIKE TO BUY YOUR PLASMA THERM SYSTEMS. PLEASE CONTACT US IF YOU HAVE SYSTEMS TO SELL. * * * * * * * * * * * * * * * * * * * * * * * * * * Reactive Ion Etcher. Computer controlled plasma processing tool. Substrate electrode 7 in. dia. holds a 6 in. wafer. Shower head gas introduction. 500W, 13.56 MHz RF generator. Turbo pumped vacuum system. Includes roughing pump. 7 gas inputs controlled via MFC. 208V, 3 Ph, 60 Hz.

Plasma Asher/Etcher with Pneumatic Vertical Door. Batch system for plasma cleaning or etching. Currently configured with one shelf set: 17 in. x 14 in. Can accommodate multiple shelves. RFX 600 13.56 MHz RF generator. Two gas inputs. Does not include vacuum pump at this price, additional cost depending on type required.

Load Locked Dual Chamber Plasma Etching System. One chamber configured for RIE and the other for ECR. PC controller with graphical user interface. System was refurbished in 2012 and installed at customer site. Unit never went into production due to facility closing. Leasing company selling to recoup costs. Missing the Leybold 1000C turbo pump. $90,000 or best offer. Sold Untested As Is.

Plasma RIE Reactive Ion Etch System. PC controlled plasma etching system. Single process chamber with shower head style gas input and a 7 in. dia. platen. 500W, 13.56 MHz RF generator. Five MFC gas flow channels, previous gases used: HC-23, N2, 02, SF6. Roughing pump with blower. Does not include water chiller.

Microwave Plasma Surface Treatment Etch System. The Microwave Plasma System 210 is ideal for: Plasma surface modification. Plasma cleaning of organic surfaces. Bond strength enhancement. Plasma etch applications. Plasma asher applications. Increased or decreased wettability. Any other plasma system application. Controller: Windows® O/S based touchscreen interface offering fully automatic control. Multi-step recipes, real time graphic display, multi-level password access, data logging, and real time SPC monitoring of all plasma parameters is provided. Microwave Power. Display: Color 10.4-inch touch screen for control and monitoring of process parameters, automatic recipes, or manual plasma treatments. Quartz Chamber: 9.5 in. dia. x 9 in. Four process gas inputs.  Previous Gases Used: O2, CF4, N2, AR. Includes vacuum pump. 230V, 1 Ph, 50/60 Hz, CE.