Used Oxford Instruments 90 Plus RIE

Trion Technology Minilock Single Wafer RIE Etcher. LCD display. Load lock with transfer arm. Current substrate carrier for up to 150mm wafers. Five MFC for gas input. Missing RF generator and vacuum pump. Sold As Is.

March Instruments PX 1000E8 Plasma Asher/Etcher with Pneumatic Vertical Door. Batch system for plasma cleaning or etching. Currently configured with vertical shelves: 18 in. x 6 in. RFX 600 13.56 MHz RF generator. Two gas inputs. Does not include vacuum pump at this price, additional cost depending on type required.

Anatech SP100 Table Top Plasma System. For plasma cleaning of small parts or for modifying surfaces. Digital countdown timer. Analog pressure display. Gas flow with needle valve control. RF Power Source: 100W at 13.56 MHz. Quartz Chamber: 4 in. x 8 in. Includes vacuum pump. 110V, 60 Hz, 10A.

Oxford Plasmalab 800 Plus PECVD Plasma Deposition System

• Plasma Enhanced Chemical Vapor Deposition 
• Automatic pressure control
• Substrate electrode: 460mm with PID control
• Can process wafer pieces
• Shower head gas inlet optimized for PECVD
• 400° C substrate table
• System Computer
• PC control with OPT software under Windows
• System software controls all aspects of machine functionality and control of the process operation
• Production mode: system will perform the following sequence without any operator intervention: chamber pumping, recipe running, chamber venting
• Process chamber includes a window panel giving a view on the process table
• System Chiller
• Edwards IHX 610 Vacuum Pump
• Advanced Energy LF-5 RF Generator
• Power: 208VAC, 3PH, 50/60 HZ
• Gas Box with MKS MFCs consisting of:
• 1)  Gas: CF4
• 2)  Gas: N2
• 3)  Gas: N2O
• 4)  Gas: SiH4
• 5)  Gas: N2
• 6)  Gas: O2 

Plasma Therm 790 ICP Inductively Coupled Plasma Etcher. Inductively Coupled Plasma (ICP) refers to a system configuration where plasma is generated by means of inductively coupling RF power in the source while independently controlling the ion energy bombarding the substrate via the applied bias power. This independent control allows for a wider process space to address a range of requirements from highly chemical processes such as the etching of Si or Cr to the highly physical processes such as the etching of sapphire. Plasma generation is done using 2 MHz RF power in the source while the bias is applied using 13.56 MHz RF power. This system is currently configured for 4" wafers but can process different size wafers if the chuck and wafer clamp are changed. We only have the 4" now. System can be configured with up to eight MFC gas inputs but only currently configured with four MFC. Previous gases used Freon, Oxygen, Argon, C318, Nitrogen. Comes with Neslab Chiller, turbo and roughing pumps. 208V,3Ph,60Hz

Oxford Plasmalab 800 Plus PECVD Plasma Deposition System

• Plasma Enhanced Chemical Vapor Deposition 
• Automatic pressure control
• Substrate electrode: 460mm with PID control
• Can process wafer pieces
• Shower head gas inlet optimized for PECVD
• 400° C substrate table
• System Computer
• PC control with OPT software under Windows
• System software controls all aspects of machine functionality and control of the process operation
• Production mode: system will perform the following sequence without any operator intervention: chamber pumping, recipe running, chamber venting
• Process chamber includes a window panel giving a view on the process table
• System Chiller
• Edwards IHX 610 Vacuum Pump
• Advanced Energy LF-5 RF Generator
• Power: 208VAC, 3PH, 50/60 HZ
• Gas Box with MKS MFCs consisting of:
• 1)  Gas: CF4
• 2)  Gas: N2
• 3)  Gas: N2O
• 4)  Gas: SiH4
• 5)  Gas: N2
• 6)  Gas: O2