Used Oxford Instruments 90 Plus RIE

Trion Technology Minilock Single Wafer RIE Etcher. LCD display. Load lock with transfer arm. Current substrate carrier for up to 150mm wafers. Five MFC for gas input. Missing RF generator and vacuum pump. Sold As Is.

March Instruments PX 1000E8 Plasma Asher/Etcher with Pneumatic Vertical Door. Batch system for plasma cleaning or etching. Currently configured with vertical shelves: 18 in. x 6 in. RFX 600 13.56 MHz RF generator. Two gas inputs. Does not include vacuum pump at this price, additional cost depending on type required.

Anatech SP100 Table Top Plasma System. For plasma cleaning of small parts or for modifying surfaces. Digital countdown timer. Analog pressure display. Gas flow with needle valve control. RF Power Source: 100W at 13.56 MHz. Quartz Chamber: 4 in. x 8 in. Includes vacuum pump. 110V, 60 Hz, 10A.

Oxford Plasmalab 800 Plus PECVD Plasma Deposition System

• Plasma Enhanced Chemical Vapor Deposition 
• Automatic pressure control
• Substrate electrode: 460mm with PID control
• Can process wafer pieces
• Shower head gas inlet optimized for PECVD
• 400° C substrate table
• System Computer
• PC control with OPT software under Windows
• System software controls all aspects of machine functionality and control of the process operation
• Production mode: system will perform the following sequence without any operator intervention: chamber pumping, recipe running, chamber venting
• Process chamber includes a window panel giving a view on the process table
• System Chiller
• Edwards IHX 610 Vacuum Pump
• Advanced Energy LF-5 RF Generator
• Power: 208VAC, 3PH, 50/60 HZ
• Gas Box with MKS MFCs consisting of:
• 1)  Gas: CF4
• 2)  Gas: N2
• 3)  Gas: N2O
• 4)  Gas: SiH4
• 5)  Gas: N2
• 6)  Gas: O2 

Automatic Tabletop Plasma Cleaner for research laboratories and low volume production.

Features:

• Cleaning modes: Immersion plasma cleaning for high speed etching and surface modification; remote plasma cleaning for gentle surface contamination removal, such as SEM/TEM sample cleaning; pulsed operation to generate plasma with average rf power less than 0.5watt for extremely delicate samples.
• Operation methods: Automatic recipe execution; automatic job sequence execution; manual operation.
• Plasma sensor: dual plasma strength sensor (patent pending) monitors in-situ plasma source and remote plasma source. Plasma strengths are displayed on the LCD touchscreen in real-time.
• Advanced process control capabilities: pressure sensor, temperature sensor, gas flow rate meters in MFC, dual plasma strength sensors, automatic impedance matching
• Chamber materials: Aluminum flange and thick-wall high purity quartz tube offer enhanced chemical resistance and reduction of alkali impurities (Ca, K, Na) found in pyrex glass.
• Quartz chamber size: inner diameter: 6.25"; depth 11"
• Sample holder: 2mm thick high purity quartz plate
• RF antenna: External rf electrodes and antenna design reduces metal sputtering issue found in plasma cleaners with internal metal electrodes.
• RF power: 13.56MHz high frequency rf power supply with automatic impedance matching for in-situ plasma source. RF power has two options: 0-75watt and 0-150watt. 13.56MHz rf power generates plasma with much higher density than KHz power supply.
• Gas input: Up to three mass flow controlled gas input (0~100sccm). (Currently TWO MFC Installed) One additional port for venting and purging. ¼ inch Swagelok compression fitting connectors.
• User interface: 7-inch resistive touchscreen, touch with fingers, no stylus required.
• Recipe and job support: Total 20 customizable recipes. Up to three cleaning steps in job sequence.

Plasma Therm 790 ICP Inductively Coupled Plasma Etcher. Inductively Coupled Plasma (ICP) refers to a system configuration where plasma is generated by means of inductively coupling RF power in the source while independently controlling the ion energy bombarding the substrate via the applied bias power. This independent control allows for a wider process space to address a range of requirements from highly chemical processes such as the etching of Si or Cr to the highly physical processes such as the etching of sapphire. Plasma generation is done using 2 MHz RF power in the source while the bias is applied using 13.56 MHz RF power. This system is currently configured for 4" wafers but can process different size wafers if the chuck and wafer clamp are changed. We only have the 4" now. System can be configured with up to eight MFC gas inputs but only currently configured with four MFC. Previous gases used Freon, Oxygen, Argon, C318, Nitrogen. Comes with Neslab Chiller, turbo and roughing pumps. 208V,3Ph,60Hz

Oxford Plasmalab 800 Plus PECVD Plasma Deposition System

• Plasma Enhanced Chemical Vapor Deposition 
• Automatic pressure control
• Substrate electrode: 460mm with PID control
• Can process wafer pieces
• Shower head gas inlet optimized for PECVD
• 400° C substrate table
• System Computer
• PC control with OPT software under Windows
• System software controls all aspects of machine functionality and control of the process operation
• Production mode: system will perform the following sequence without any operator intervention: chamber pumping, recipe running, chamber venting
• Process chamber includes a window panel giving a view on the process table
• System Chiller
• Edwards IHX 610 Vacuum Pump
• Advanced Energy LF-5 RF Generator
• Power: 208VAC, 3PH, 50/60 HZ
• Gas Box with MKS MFCs consisting of:
• 1)  Gas: CF4
• 2)  Gas: N2
• 3)  Gas: N2O
• 4)  Gas: SiH4
• 5)  Gas: N2
• 6)  Gas: O2